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| 2N3905 | 350mW PNP silicon planar epitaxial transistor | ME | N/A | 3 | -55°C | 150°C | 2N3905 datasheet (112K) |
| 2N3905 | General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. | USHA | N/A | 3 | 0°C | 150°C | 2N3905 datasheet (73K) |
| 2N3906 | PNP General Purpose Amplifier | Fairchild-Semiconductor | N/A | 3 | N/A | N/A | 2N3906 datasheet (49K) |
| 2N3906 | Small Signal Transistor (PNP) | General-Semiconductor | N/A | - | N/A | N/A | 2N3906 datasheet (113K) |
| 2N3906 | PNP transistor for general purpose and switching applications | Korea-Electronics-Co--Ltd- | N/A | 3 | -55°C | 150°C | 2N3906 datasheet (191K) |
| 2N3906 | Vce=1.0V transistor | MCC | N/A | - | N/A | N/A | 2N3906 datasheet (93K) |
| 2N3906 | 350mW PNP silicon planar epitaxial transistor | ME | N/A | 3 | -55°C | 150°C | 2N3906 datasheet (112K) |
| 2N3906 | General Purpose Transistors PNP | ON-Semiconductor | N/A | 3 | N/A | N/A | 2N3906 datasheet (145K) |
| 2N3906 | PNP switching transistor. | Philips-Semiconductors | SOT54 | 3 | -65°C | 150°C | 2N3906 datasheet (50K) |
| 2N3906 | PNP switching transistor. | Philips-Semiconductors | N/A | 3 | -65°C | 150°C | 2N3906 datasheet (50K) |