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| 2N4119A | Ultra-high input impedance N-channel JFET | Linear-Integrated-System-Inc-Linear-Systems | N/A | 4 | -65°C | 175°C | 2N4119A datasheet (10M) |
| 2N4123 | NPN General Purpose Amplifier | Fairchild-Semiconductor | N/A | - | N/A | N/A | 2N4123 datasheet (32K) |
| 2N4123 | Ic=200mA, Vce=1.0V transistor | MCC | N/A | - | N/A | N/A | 2N4123 datasheet (747K) |
| 2N4123 | 200mW NPN silicon planar epixial transistor | ME | N/A | 3 | N/A | N/A | 2N4123 datasheet (85K) |
| 2N4123 | General Purpose Transistor - NPN | ON-Semiconductor | N/A | 3 | N/A | N/A | 2N4123 datasheet (162K) |
| 2N4123 | General purpose transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 40V. Collector dissipation: Pc(max) = 625mW. | USHA | N/A | 3 | 0°C | 150°C | 2N4123 datasheet (45K) |
| 2N4123RLRA | General Purpose Transistor - NPN | ON-Semiconductor | N/A | 3 | N/A | N/A | 2N4123RLRA datasheet (162K) |
| 2N4123RLRM | General Purpose Transistor - NPN | ON-Semiconductor | N/A | 3 | N/A | N/A | 2N4123RLRM datasheet (162K) |
| 2N4124 | NPN General Purpose Amplifier | Fairchild-Semiconductor | N/A | - | N/A | N/A | 2N4124 datasheet (93K) |
| 2N4124 | Small Signal Transistor (NPN) | General-Semiconductor | N/A | - | N/A | N/A | 2N4124 datasheet (210K) |