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| 2N5089 | Amplifier transistor. Collector-emitter voltage: Vceo = 25V. Collector-base voltage: Vcbo = 30V. Collector dissipation: Pc(max) = 625mW. | USHA | N/A | 3 | 0°C | 150°C | 2N5089 datasheet (80K) |
| 2N5089RLRA | Amplifier Transistor NPN | ON-Semiconductor | N/A | 3 | N/A | N/A | 2N5089RLRA datasheet (281K) |
| 2N5089RLRE | Amplifier Transistor NPN | ON-Semiconductor | N/A | 3 | N/A | N/A | 2N5089RLRE datasheet (281K) |
| 2N5109 | RF NPN Transistor | Microsemi-Corporation | N/A | - | N/A | N/A | 2N5109 datasheet (281K) |
| 2N5109 | Chip: geometry 1007; polarity NPN | SECOA | N/A | - | N/A | N/A | 2N5109 datasheet (31K) |
| 2N5109 | Chip: 3.0V; 40mA geometry 1007; polarity NPN | SECOA | N/A | 3 | -65°C | 200°C | 2N5109 datasheet (47K) |
| 2N5109UB | Chip: geometry 1007; polarity NPN | SECOA | N/A | - | N/A | N/A | 2N5109UB datasheet (31K) |
| 2N5114 | 30 V, P-Channel JFET switch | Calogic-LLC | N/A | 3 | -55°C | 200°C | 2N5114 datasheet (33K) |
| 2N5114 | P-Channel silicon junction field-effect transistor | IFET | N/A | 3 | N/A | N/A | 2N5114 datasheet (64K) |
| 2N5115 | 30 V, P-Channel JFET switch | Calogic-LLC | N/A | 3 | -55°C | 200°C | 2N5115 datasheet (33K) |