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| 2N5195 | PNP SILICON TRANSISTOR | SGS-Thomson-Microelectronics | N/A | - | N/A | N/A | 2N5195 datasheet (61K) |
| 2N5208 | PNP transistor, 25V | Motorola | N/A | 3 | -55°C | 150°C | 2N5208 datasheet (297K) |
| 2N5209 | 350mW NPN silicon AF low noise small signal transistor | ME | N/A | 3 | -55°C | 150°C | 2N5209 datasheet (146K) |
| 2N5209RLRE | Amplifier Transistor NPN | ON-Semiconductor | N/A | 3 | N/A | N/A | 2N5209RLRE datasheet (277K) |
| 2N5210 | NPN General Purpose Amplifier | Fairchild-Semiconductor | N/A | 3 | N/A | N/A | 2N5210 datasheet (77K) |
| 2N5210 | 350mW NPN silicon AF low noise small signal transistor | ME | N/A | 3 | -55°C | 150°C | 2N5210 datasheet (146K) |
| 2N5210 | Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 50V. Collector dissipation: Pc(max) = 625mW. | USHA | N/A | 3 | 0°C | 150°C | 2N5210 datasheet (45K) |
| 2N5210RLRA | Amplifier Transistor NPN | ON-Semiconductor | N/A | 3 | N/A | N/A | 2N5210RLRA datasheet (277K) |
| 2N5225 | 350mW NPN silicon transistor | ME | N/A | 3 | -55°C | 150°C | 2N5225 datasheet (41K) |
| 2N5232 | 330mW NPN silicon transistor | ME | N/A | 3 | -55°C | 150°C | 2N5232 datasheet (55K) |