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| 2N5237 | Chip: 10V; 10A geometry 3111; polarity NPN | SECOA | N/A | 3 | -65°C | 200°C | 2N5237 datasheet (145K) |
| 2N5238 | Chip: 10V; 10A geometry 3111; polarity NPN | SECOA | N/A | 3 | -65°C | 200°C | 2N5238 datasheet (55K) |
| 2N5249 | 330mW NPN silicon transistor | ME | N/A | 3 | -55°C | 150°C | 2N5249 datasheet (43K) |
| 2N5294 | Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcer = 75Vdc, Vcbo = 80Vdc, Veb = 7Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. | USHA | N/A | 3 | -65°C | 150°C | 2N5294 datasheet (46K) |
| 2N5296 | Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 40Vdc, Vcer = 50Vdc, Vcbo = 60Vdc, Veb = 5Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. | USHA | N/A | 3 | -65°C | 150°C | 2N5296 datasheet (46K) |
| 2N5301 | NPN silicon high-power transistor | MOSP | N/A | 2 | -65°C | 200°C | 2N5301 datasheet (178K) |
| 2N5302 | NPN silicon high-power transistor | MOSP | N/A | 2 | -65°C | 200°C | 2N5302 datasheet (178K) |
| 2N5302 | High-Power NPN Silicon Transistors | ON-Semiconductor | N/A | 2 | N/A | N/A | 2N5302 datasheet (251K) |
| 2N5302 | NPN planar silicon transistor. Audio power amplifier DC to DC converter | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | N/A | 3 | N/A | N/A | 2N5302 datasheet (47K) |
| 2N5303 | NPN silicon high-power transistor | MOSP | N/A | 2 | -65°C | 200°C | 2N5303 datasheet (178K) |