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| 2N5367 | 360mW PNP silicon transistor | ME | N/A | 3 | -55°C | 150°C | 2N5367 datasheet (57K) |
| 2N5368 | 500mW complementary silicon general purpose amplifier | ME | N/A | 3 | -55°C | 150°C | 2N5368 datasheet (86K) |
| 2N5369 | 500mW complementary silicon general purpose amplifier | ME | N/A | 3 | -55°C | 150°C | 2N5369 datasheet (86K) |
| 2N5370 | 500mW complementary silicon general purpose amplifier | ME | N/A | 3 | -55°C | 150°C | 2N5370 datasheet (86K) |
| 2N5371 | 500mW complementary silicon general purpose amplifier | ME | N/A | 3 | -55°C | 150°C | 2N5371 datasheet (86K) |
| 2N5372 | 500mW complementary silicon general purpose amplifier | ME | N/A | 3 | -55°C | 150°C | 2N5372 datasheet (86K) |
| 2N5373 | 500mW complementary silicon general purpose amplifier | ME | N/A | 3 | -55°C | 150°C | 2N5373 datasheet (86K) |
| 2N5374 | 500mW complementary silicon general purpose amplifier | ME | N/A | 3 | -55°C | 150°C | 2N5374 datasheet (86K) |
| 2N5375 | 500mW complementary silicon general purpose amplifier | ME | N/A | 3 | -55°C | 150°C | 2N5375 datasheet (86K) |
| 2N5397 | N-Channel silicon junction field-effect transistor | IFET | N/A | 4 | N/A | N/A | 2N5397 datasheet (91K) |