Datasheets search, free datasheets
More 6 000 000 datasheets
| 2N5550S | NPN transistor for general purpose and high voltage applications | Korea-Electronics-Co--Ltd- | N/A | 3 | -55°C | 150°C | 2N5550S datasheet (152K) |
| 2N5551 | 150 V, NPN epitaxial planar selicon high voltage transistor | BOCA | N/A | 3 | -55°C | 150°C | 2N5551 datasheet (57K) |
| 2N5551 | NPN General Purpose Amplifier | Fairchild-Semiconductor | N/A | 3 | N/A | N/A | 2N5551 datasheet (500K) |
| 2N5551 | NPN transistor for general purpose and high voltage applications | Korea-Electronics-Co--Ltd- | N/A | 3 | -55°C | 150°C | 2N5551 datasheet (146K) |
| 2N5551 | 1W NPN complementary silicon general purpose high voltage transistor | ME | N/A | 3 | -55°C | 150°C | 2N5551 datasheet (165K) |
| 2N5551 | Amplifier Transistor NPN | ON-Semiconductor | N/A | 3 | N/A | N/A | 2N5551 datasheet (188K) |
| 2N5551 | NPN high-voltage transistor. | Philips-Semiconductors | N/A | 3 | -65°C | 150°C | 2N5551 datasheet (55K) |
| 2N5551 | NPN high-voltage transistor. | Philips-Semiconductors | SOT54 | 3 | -65°C | 150°C | 2N5551 datasheet (55K) |
| 2N5551 | Amplifier transistor. Collector-emitter voltage: Vceo = 160V. Collector-base voltage: Vcbo = 180V. Collector dissipation: Pc(max) = 625mW. | USHA | N/A | 3 | 0°C | 150°C | 2N5551 datasheet (75K) |
| 2N5551C | NPN transistor for general purpose and high voltage applications | Korea-Electronics-Co--Ltd- | N/A | 3 | -55°C | 150°C | 2N5551C datasheet (164K) |