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2N5881 | Complementary silicon high-power transistor | MOSP | N/A | 2 | -65°C | 200°C | 2N5881 datasheet (180K) |
2N5882 | 80 V, complementary NPN selicon high-power transistor | BOCA | N/A | 2 | -65°C | 200°C | 2N5882 datasheet (186K) |
2N5882 | Complementary silicon high-power transistor | MOSP | N/A | 2 | -65°C | 200°C | 2N5882 datasheet (180K) |
2N5883 | 60 V, complementary PNP selicon high-power transistor | BOCA | N/A | 2 | -65°C | 200°C | 2N5883 datasheet (190K) |
2N5883 | Complementary silicon high-power transistor | MOSP | N/A | 2 | -65°C | 200°C | 2N5883 datasheet (183K) |
2N5884 | 80 V, complementary PNP selicon high-power transistor | BOCA | N/A | 2 | -65°C | 200°C | 2N5884 datasheet (190K) |
2N5884 | Complementary silicon high-power transistor | MOSP | N/A | 2 | -65°C | 200°C | 2N5884 datasheet (183K) |
2N5884 | hfe min 20 Transistor polarity PNP Current Ic continuous max 25 A Voltage Vceo 80 V Current Ic (hfe) 10 A Power Ptot 200 W Temperature power 25 ?C Transistors number of 1 | SGS-Thomson-Microelectronics | N/A | - | N/A | N/A | 2N5884 datasheet (68K) |
2N5885 | 60 V, complementary NPN selicon high-power transistor | BOCA | N/A | 2 | -65°C | 200°C | 2N5885 datasheet (190K) |
2N5885 | Complementary silicon high-power transistor | MOSP | N/A | 2 | -65°C | 200°C | 2N5885 datasheet (183K) |