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| 2SA817 | Silicon PNP transistor for audio frequency amplifier applications. Suitable for driver of 20-25 watts audio amplivier | Toshiba | N/A | 3 | -55°C | 150°C | 2SA817 datasheet (145K) |
| 2SA817A | Silicon PNP transistor for driver stage amplifier and voltage amplifier applications | Toshiba | N/A | 3 | -55°C | 150°C | 2SA817A datasheet (150K) |
| 2SA836 | Small signal general purpose transistor | HIT | N/A | - | N/A | N/A | 2SA836 datasheet (32K) |
| 2SA844 | Small signal general purpose transistor | HIT | N/A | - | N/A | N/A | 2SA844 datasheet (23K) |
| 2SA854S | PNP silicon medium power transistor | ROHM | N/A | 3 | N/A | N/A | 2SA854S datasheet (101K) |
| 2SA872A | Small signal general purpose transistor | HIT | N/A | - | N/A | N/A | 2SA872A datasheet (37K) |
| 2SA893 | Small signal general purpose transistor | HIT | N/A | - | N/A | N/A | 2SA893 datasheet (24K) |
| 2SA893A | Small signal general purpose transistor | HIT | N/A | - | N/A | N/A | 2SA893A datasheet (24K) |
| 2SA9012 | 1W output amplifier or portable radios in class B push-pull operation. Collector-base voltage: Vcbo = -40V. Collector-emitter voltage: Vceo = -20V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 625mW. Collector current Ic = -500mA. | USHA | N/A | 3 | 0°C | 150°C | 2SA9012 datasheet (74K) |
| 2SA9015 | Low frequency, low noise amplifier. Collector-base voltage: Vcbo = -50V. Collector-emitter voltage: Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 450mW. Collector current Ic = -100mA. | USHA | N/A | 3 | 0°C | 150°C | 2SA9015 datasheet (86K) |