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| 2SB1115-T2 | Silicon transistor | NEC-Electronics-Inc- | N/A | - | N/A | N/A | 2SB1115-T2 datasheet (228K) |
| 2SB1115A | 80 V, 2 A, 2 W silicon transistor | EIC | N/A | 3 | N/A | N/A | 2SB1115A datasheet (228K) |
| 2SB1115A | Silicon transistor | NEC-Electronics-Inc- | N/A | - | N/A | N/A | 2SB1115A datasheet (228K) |
| 2SB1115A-T1 | Silicon transistor | NEC-Electronics-Inc- | N/A | - | N/A | N/A | 2SB1115A-T1 datasheet (228K) |
| 2SB1115A-T2 | Silicon transistor | NEC-Electronics-Inc- | N/A | - | N/A | N/A | 2SB1115A-T2 datasheet (228K) |
| 2SB1116 | Audio frequency power amplifier medium speed switching. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -6V. Collector dissipation: Pc(max) = 0,75W. | USHA | N/A | 3 | 0°C | 150°C | 2SB1116 datasheet (143K) |
| 2SB1116A | Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = -80V. Collector-emitter voltage Vceo = -60V. Emitter-base voltage Vebo = -6V. Collector dissipation Pc(max) = 0,75W. | USHA | N/A | 3 | 0°C | 150°C | 2SB1116A datasheet (143K) |
| 2SB1118 | PNP epitaxial planar silicon transistor low-voltage, high-current amp, muting application | SANYO-Electric-Co--Ltd- | 2038 | 3 | N/A | N/A | 2SB1118 datasheet (85K) |
| 2SB1119 | PNP epitaxial planar silicon transistor, LF amp, electronic governor application | SANYO-Electric-Co--Ltd- | 2038 | 3 | N/A | N/A | 2SB1119 datasheet (85K) |
| 2SB1120 | PNP epitaxial planar silicon transistor, high-current driver application | SANYO-Electric-Co--Ltd- | 2038 | 3 | N/A | N/A | 2SB1120 datasheet (76K) |