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| 2SB564 | Silicon PNP transistor for use in driver and output stages of audio frequency amplifiers | ME | N/A | 3 | -55°C | 150°C | 2SB564 datasheet (79K) |
| 2SB564A | Audio frequency power amplifier. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 800mW. Collector current Ic = -1.0A. | USHA | N/A | 3 | 0°C | 150°C | 2SB564A datasheet (89K) |
| 2SB566(K) | Bipolar power switching transistor | HIT | N/A | - | N/A | N/A | 2SB566(K) datasheet (33K) |
| 2SB566A(K) | Bipolar power switching transistor | HIT | N/A | - | N/A | N/A | 2SB566A(K) datasheet (33K) |
| 2SB566A(K) | Bipolar power switching transistor | HIT | N/A | - | N/A | N/A | 2SB566A(K) datasheet (33K) |
| 2SB592 | 750mW NPN silicon transistor | ME | N/A | 3 | -55°C | 150°C | 2SB592 datasheet (89K) |
| 2SB592A | 750mW NPN silicon transistor | ME | N/A | 3 | -55°C | 150°C | 2SB592A datasheet (89K) |
| 2SB595 | PNP epitaxial silicon transistor. Low frequency power amplifier. | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | N/A | 3 | N/A | N/A | 2SB595 datasheet (69K) |
| 2SB596 | 4Ampere PNP silicon power transistor | MOSP | N/A | 3 | -55°C | 150°C | 2SB596 datasheet (119K) |
| 2SB596 | PNP epitaxial silicon transistor. Low frequency power amplifier. | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | N/A | 3 | N/A | N/A | 2SB596 datasheet (69K) |