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| 2SB962-Z | Silicon transistor | NEC-Electronics-Inc- | N/A | - | N/A | N/A | 2SB962-Z datasheet (233K) |
| 2SB963 | Darlington transistor | NEC-Electronics-Inc- | N/A | - | N/A | N/A | 2SB963 datasheet (219K) |
| 2SB963-Z | Darlington transistor | NEC-Electronics-Inc- | N/A | - | N/A | N/A | 2SB963-Z datasheet (219K) |
| 2SB985 | PNP epitaxial planar silicon transistor, large-current driving application | SANYO-Electric-Co--Ltd- | 2006A | 3 | N/A | N/A | 2SB985 datasheet (96K) |
| 2SB986 | PNP epitaxial planar silicon darlington transistor, 50V/4A switching application | SANYO-Electric-Co--Ltd- | 2009B | 3 | N/A | N/A | 2SB986 datasheet (111K) |
| 2SC0829 | Silicon NPN epitaxial planer type small signal transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | N/A | - | N/A | N/A | 2SC0829 datasheet (55K) |
| 2SC1008 | Low frequency amplifier medium speed switching. Collector-base voltage Vcbo = 80V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. | USHA | N/A | 3 | 0°C | 150°C | 2SC1008 datasheet (73K) |
| 2SC1009 | High voltage amplifier. Collector-base voltage Vcbo = 160V. Collector-emitter voltage Vceo = 140V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. | USHA | N/A | 3 | 0°C | 150°C | 2SC1009 datasheet (72K) |
| 2SC1009A-L | Silicon transistor | NEC-Electronics-Inc- | N/A | - | N/A | N/A | 2SC1009A-L datasheet (325K) |
| 2SC1009A-T1B | Silicon transistor | NEC-Electronics-Inc- | N/A | - | N/A | N/A | 2SC1009A-T1B datasheet (325K) |