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| 2SC5801 | NPN transistor for high-frequency low noise | NEC-Electronics-Inc- | N/A | 3 | -65°C | 150°C | 2SC5801 datasheet (101K) |
| 2SC5801-T3 | NPN transistor for high-frequency low noise | NEC-Electronics-Inc- | N/A | 3 | -65°C | 150°C | 2SC5801-T3 datasheet (101K) |
| 2SC5895 | NPN power transistor for DC-DC converters, 2A, 60V | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | N/A | 3 | -55°C | 150°C | 2SC5895 datasheet (54K) |
| 2SC5895 | NPN power transistor for DC-DC converters, 2A, 60V | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | N/A | 3 | -55°C | 150°C | 2SC5895 datasheet (54K) |
| 2SC681 | 6Ampere NPN silicon power transistor | MOSP | N/A | 3 | -65°C | 150°C | 2SC681 datasheet (107K) |
| 2SC681ARD | 6Ampere NPN silicon power transistor | MOSP | N/A | 3 | -65°C | 150°C | 2SC681ARD datasheet (107K) |
| 2SC681AYL | 6Ampere NPN silicon power transistor | MOSP | N/A | 3 | -65°C | 150°C | 2SC681AYL datasheet (107K) |
| 2SC730 | NPN epitaxial planar type | Mitsubishi-Electric-Corporation-Semiconductor-Group | N/A | 3 | N/A | N/A | 2SC730 datasheet (124K) |
| 2SC741 | NPN epitaxial planar type | Mitsubishi-Electric-Corporation-Semiconductor-Group | N/A | 3 | N/A | N/A | 2SC741 datasheet (123K) |
| 2SC815 | Low power amplifier high frequency oscillator . Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 45V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic = 200mA. | USHA | N/A | 3 | 0°C | 150°C | 2SC815 datasheet (82K) |