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| 2SD2266 | Silicon NPN triple diffusion planar type power transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | N/A | - | N/A | N/A | 2SD2266 datasheet (53K) |
| 2SD227 | Transistor. Low frequency power amplifier. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic = 300mA. | USHA | N/A | 3 | 0°C | 150°C | 2SD227 datasheet (74K) |
| 2SD2271 | Silicon NPN transistor for motor drive applications and high current switching applications | Toshiba | N/A | 3 | -55°C | 150°C | 2SD2271 datasheet (204K) |
| 2SD2273 | Silicon NPN triple diffusion planar type Darlington power transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | N/A | - | N/A | N/A | 2SD2273 datasheet (56K) |
| 2SD2275 | Silicon NPN triple diffusion planar type Darlington power transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | N/A | - | N/A | N/A | 2SD2275 datasheet (57K) |
| 2SD2276 | Silicon NPN triple diffusion planar type Darlington power transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | N/A | - | N/A | N/A | 2SD2276 datasheet (57K) |
| 2SD2280 | NPN epitaxial planar silicon transistor, high-current switching application | SANYO-Electric-Co--Ltd- | 2039A | 3 | N/A | N/A | 2SD2280 datasheet (102K) |
| 2SD2281 | NPN epitaxial planar silicon transistor, high-current switching application | SANYO-Electric-Co--Ltd- | 2039A | 3 | N/A | N/A | 2SD2281 datasheet (103K) |
| 2SD2282 | NPN epitaxial planar silicon transistor, high-current switching application | SANYO-Electric-Co--Ltd- | 2039A | 3 | N/A | N/A | 2SD2282 datasheet (114K) |
| 2SD2284 | NPN epitaxial planar silicon transistor, 60V/3A driver application | SANYO-Electric-Co--Ltd- | 2084 | 3 | N/A | N/A | 2SD2284 datasheet (102K) |