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Part name
Description
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PDF datasheet
3EZ200Glass passivated junction silicon zener. Power 3.0 Watts. Vz = 200 V. Izt = 3.7 mA.PAJITN/A2-55°C | 150°C3EZ200 datasheet (461K)
3EZ200200 V, 3 W, glass passivated junction silicon zener diodeTELN/A2-55°C | 150°C3EZ200 datasheet (282K)
3EZ200200 V, 0.5 A, 3 W, glass passivated junction silicon zener diodeTRSYSN/A2-55°C | 150°C3EZ200 datasheet (282K)
3EZ200D3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-20% tolerance.JGDN/A2-65°C | 175°C3EZ200D datasheet (146K)
3EZ200D13 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-1% tolerance.JGDN/A2-65°C | 175°C3EZ200D1 datasheet (146K)
3EZ200D103 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-10% tolerance.JGDN/A2-65°C | 175°C3EZ200D10 datasheet (146K)
3EZ200D23 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-2% tolerance.JGDN/A2-65°C | 175°C3EZ200D2 datasheet (146K)
3EZ200D33 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-3% tolerance.JGDN/A2-65°C | 175°C3EZ200D3 datasheet (146K)
3EZ200D43 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-4% tolerance.JGDN/A2-65°C | 175°C3EZ200D4 datasheet (146K)
3EZ200D5200 V, 3 W, silicon zener diodeEICN/A2-55°C | 175°C3EZ200D5 datasheet (37K)