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| 1N4448WS | Surface mount switching diode. Voltage 75V. Power 200mW. Peak reverse voltage 100V. | PAJIT | N/A | 2 | -55°C | 125°C | 1N4448WS datasheet (127K) |
| 1N4448WS-T1 | 75V surface mount fast switching diode | WTE | N/A | 2 | -65°C | 150°C | 1N4448WS-T1 datasheet (40K) |
| 1N4448WS-T1 | 75V surface mount fast switching diode | WTE | N/A | 2 | -65°C | 150°C | 1N4448WS-T1 datasheet (40K) |
| 1N4448WS-T1 | 75V surface mount fast switching diode | WTE | N/A | 2 | -65°C | 150°C | 1N4448WS-T1 datasheet (40K) |
| 1N4448WS-T3 | 75V surface mount fast switching diode | WTE | N/A | 2 | -65°C | 150°C | 1N4448WS-T3 datasheet (40K) |
| 1N4448WS-T3 | 75V surface mount fast switching diode | WTE | N/A | 2 | -65°C | 150°C | 1N4448WS-T3 datasheet (40K) |
| 1N4449 | Small signal switching diode. Peak reverse voltage VRM = 100 V. Maximum average rectified current IAV = 150 mA. | CNEL | N/A | 2 | -65°C | 175°C | 1N4449 datasheet (47K) |
| 1N4449 | Small signal switching diode. Peak reverse voltage VRM = 100 V. Maximum average rectified current IAV = 150 mA. | CNEL | N/A | 2 | -65°C | 175°C | 1N4449 datasheet (47K) |
| 1N4449 | 100 V, 150 mA, Silicon epitaxial planar diode | GODAR | N/A | 2 | N/A | N/A | 1N4449 datasheet (23K) |
| 1N4449 | 100 V, 150 mA, silicon epitaxial planar diode | HONEY | DO | 2 | N/A | N/A | 1N4449 datasheet (88K) |